DocumentCode :
1311107
Title :
Terahertz Generation and Detection Using Low Temperature Grown InGaAs-InAlAs Photoconductive Antennas at 1.55 
Pulse Excitation
Author :
Kostakis, Ioannis ; Saeedkia, Daryoosh ; Missous, Mohamed
Author_Institution :
Sch. of Electr. & Electron. Eng., Univ. of Manchester, Manchester, UK
Volume :
2
Issue :
6
fYear :
2012
Firstpage :
617
Lastpage :
622
Abstract :
Photoconductive antennas fabricated on novel low temperature (LT) beryllium (Be) doped InGaAs-InAlAs multi-quantum-well structures have been evaluated as THz emitters and detectors in a time-domain spectroscopy (TDS) system. We present system responses with THz pulses having spectral range up to 3 THz and power to noise ratio of 60 dB, making them competitive with LT-GaAs excited at 800 nm and among the highest reported to date for this material system.
Keywords :
III-V semiconductors; aluminium compounds; beryllium; gallium arsenide; indium compounds; photoconducting materials; semiconductor quantum wells; submillimetre wave antennas; terahertz wave detectors; InGaAs-InAlAs:Be; low temperature grown photoconductive antenna; material system; novel low temperature beryllium doped multiquantum-well structure; photoconductive antenna; pulse excitation; terahertz detection; terahertz generation; terahertz pulse; time-domain spectroscopy system; wavelength 800 nm; Antennas; Detectors; Indium compounds; Indium gallium arsenide; Laser excitation; Photoconductivity; Semiconductor materials; Spectroscopy; Low temperature (LT) InGaAs-InAlAs; THz emitters and detectors; pulse excitation; time-domain spectroscopy;
fLanguage :
English
Journal_Title :
Terahertz Science and Technology, IEEE Transactions on
Publisher :
ieee
ISSN :
2156-342X
Type :
jour
DOI :
10.1109/TTHZ.2012.2219047
Filename :
6324408
Link To Document :
