Title :
Design and Analysis of Ultra Wideband GaN Dual-Gate HEMT Low-Noise Amplifiers
Author :
Shih, Shih-En ; Deal, William R. ; Yamauchi, Derrick M. ; Sutton, William E. ; Luo, Wen-Ben ; Chen, Yaochung ; Smorchkova, Ioulia P. ; Heying, Benjamin ; Wojtowicz, Michael ; Siddiqui, Mansoor
Author_Institution :
Northrop Grumman Aerosp. Syst., Redondo Beach, CA, USA
Abstract :
In this paper, we present three ultra wide bandwidth low-noise amplifiers (LNAs) using dual-gate AlGaN/GaN HEMT devices. The single-stage, resistive feedback amplifiers target two different frequency bands: two LNAs operate in 0.3-4 GHz and one LNA is in 1.2-18 GHz. All three LNAs are capable of better than 13:1 bandwidth. The first low frequency amplifier uses a microstrip design and achieves 17.7 dB flat gain between 300 MHz-3 GHz, and 1.2 dB minimum noise figure around 1.3 GHz. The second 0.3-4 GHz LNA uses coplanar waveguide transmission lines and demonstrates 18 dB flat gain and 1.5 dB noise figure between 2 and 5 GHz. The high frequency microstrip-type LNA shows an average of 13 dB gain and between 2-3 dB noise figure across the band. The robust LNAs can be operated under various bias voltages while similar gain and noise figure performance are maintained.
Keywords :
aluminium compounds; gallium compounds; high electron mobility transistors; low noise amplifiers; AlGaN-GaN; GaN; LNA; frequency 0.3 GHz to 4 GHz; frequency 1.2 GHz to 18 GHz; gain 13 dB; gain 17.7 dB; gain 18 dB; noise figure 1.2 dB; noise figure 1.5 dB; noise figure 2 dB to 3 dB; ultra wideband dual-gate HEMT low-noise amplifiers; Broadband amplifier; GaN; dual-gate; high electron mobility transistor (HEMT); low-noise amplifier (LNA);
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2009.2034416
