Extraction of Location and Energy Level of the Trap Causing Random Telegraph Noise at Reverse-Biased Region in GaN-Based Light-Emitting Diodes

Author

Park, Jungjin ; Kang, Donghoon ; Son, Joong-Kon ; Shin, Hyungcheol

Author_Institution

Inter-Univ. Semicond. Res. Center, Seoul Nat. Univ., Seoul, South Korea

Volume

59

Issue

12

fYear

2012

Firstpage

3495

Lastpage

3502

Abstract

In order to analyze the trap in the multi-quantum well (MQW) consisting of a GaN-InGaN pair, the extraction of the location and energy level of the trap using random-telegraph-noise experiment was presented. Through the simplification of the band diagram of the complex MQW into an approximate structure, the equation for the location and the energy level of the trap was expressed as simply as possible. As a result of the extraction, we found that the traps of each sample are located very close to p-GaN or n-GaN interfaces.

Keywords

III-V semiconductors; energy states; gallium compounds; indium compounds; light emitting diodes; random noise; semiconductor quantum wells; wide band gap semiconductors; GaN-InGaN; MQW; approximate structure; energy level extraction; location extraction; multiquantum well; random-telegraph-noise experiment; Electron traps; Energy states; Gallium nitride; Light emitting diodes; Quantum well devices; Tunneling; Defect; Fermi level; light-emitting diode (LED); multiple-quantum well (MQW); nonradiative recombination; random telegraph noise (RTN); trap; tunneling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2012.2218248

Filename

6324424