High-field stressing of LPCVD gate oxides

Author

Rao, V. Ramgopal ; Eisele, I. ; Patrikar, R.M. ; Sharma, D.K. ; Vasi, J. ; Grabolla, T.

Author_Institution

Dept. of Electr. Eng., Indian Inst. of Technol., Bombay, India

Volume

18

Issue

3

fYear

1997

fDate

3/1/1997 12:00:00 AM

Firstpage

84

Lastpage

86

Abstract

We have investigated gate oxide degradation as a function of high-field constant current stress for two types of oxides, viz. standard dry and LPCVD oxides. Charge injection was done from both electrodes, the gate and the substrate. Our results indicate that compared to dry oxides, LPCVD oxides show reduced charge trapping and interface state generation for inversion stress. The degradation in LPCVD oxides with constant current stress has been explained by the hydrogen model.

Keywords

CVD coatings; dielectric thin films; electron traps; high field effects; hot carriers; hydrogen; interface states; semiconductor-insulator boundaries; H; LPCVD gate oxides; Si-SiO/sub 2/; charge injection; charge trapping reduction; gate oxide degradation; high-field constant current stress; high-field stressing; hydrogen model; interface state generation reduction; inversion stress; standard dry oxide; Annealing; Capacitors; Degradation; Dielectric substrates; Electrodes; Oxidation; Silicon; Temperature; Thermal stresses; Ultra large scale integration;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.556088

Filename

556088