DocumentCode :
1311268
Title :
Simple and accurate procedure for modeling erbium-doped waveguide amplifiers with high concentration
Author :
Vermelho, M.V.D. ; Peschel, Ulf ; Aitchison, J.Stewart
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Volume :
18
Issue :
3
fYear :
2000
fDate :
3/1/2000 12:00:00 AM
Firstpage :
401
Lastpage :
408
Abstract :
We present an accurate, fast, and easily implemented procedure for modeling erbium-doped waveguide amplifiers (EDWAs) with high concentration doping level. The model is shown to be in a very good agreement when compared with experimental results, and is used in a detailed analysis of a waveguide amplifier with 980-nm pumping.
Keywords :
erbium; laser theory; laser transitions; optical communication equipment; optical pumping; solid lasers; waveguide lasers; 980 nm; 980-nm pumping; accurate procedure; erbium-doped waveguide amplifier modelling; high concentration doping level; laser pumping; Absorption; Erbium; Erbium-doped fiber amplifier; Nonlinear optics; Optical amplifiers; Optical pumping; Optical waveguides; Semiconductor optical amplifiers; Spontaneous emission; Stimulated emission;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/50.827513
Filename :
827513
Link To Document :
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