Title :
High-voltage double-implanted power MOSFET´s in 6H-SiC
Author :
Shenoy, Jayarama N. ; Cooper, James A., Jr. ; Melloch, Michael R.
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
fDate :
3/1/1997 12:00:00 AM
Abstract :
We report on the first planar high-voltage MOSFET´s in 6H-SiC. A double-implant MOS (DIMOS) process is used. The planar structure ameliorates the high-field stressing encountered by SiC UMOS transistors fabricated by other groups. Blocking mode operation of up to 760 V is demonstrated, which is nearly three times higher than previously reported operating voltages for SiC MOSFET´s.
Keywords :
doping profiles; ion implantation; power MOSFET; silicon compounds; wide band gap semiconductors; 6H-SiC; 760 V; DIMOS process; SiC; UMOS transistors; blocking mode operation; double-implant MOS process; double-implanted power MOSFET; planar high-voltage MOSFET; Breakdown voltage; Crystalline materials; Epitaxial growth; Implants; Integrated circuit technology; MOSFET circuits; Photonic band gap; Silicon carbide; Substrates; Thermal conductivity;
Journal_Title :
Electron Device Letters, IEEE
