Title :
Cosmic ray neutron-induced soft errors in sub-half micron CMOS circuits
Author :
Tosaka, Y. ; Satoh, S. ; Itakura, T. ; Suzuki, K. ; Sugii, T. ; Ehara, H. ; Woffinden, G.A.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
fDate :
3/1/1997 12:00:00 AM
Abstract :
We numerically investigated cosmic ray neutron-induced soft errors in sub-half micron CMOS SRAM and latch circuits at sea level. For our purpose, we developed an original simulator which reproduces well the experimental charge collection data. We investigated soft error rates (SERs) and showed that the neutron-induced SERs in the SRAM are the same order as those due to /spl alpha/-particles and the SERs in the latch are dominated by neutrons.
Keywords :
CMOS logic circuits; CMOS memory circuits; SRAM chips; circuit analysis computing; errors; flip-flops; integrated circuit modelling; neutron effects; 0.35 to 0.5 micron; SER; SRAM circuits; charge collection data; cosmic ray neutron-induced soft errors; latch circuits; sea level; simulator; soft error rates; sub-half micron CMOS circuits; Atmospheric modeling; Circuit simulation; Databases; Diodes; Latches; Neutrons; Nuclear power generation; Random access memory; Silicon; Testing;
Journal_Title :
Electron Device Letters, IEEE
