Excess noise reduction in GaInP/GaAs heterojunction bipolar transistors

Author

Plana, R. ; van Haaren, B. ; Escotte, L. ; Delage, S.L. ; Blanck, H. ; Graffeuil, J.

Author_Institution

Lab. d´´Autom. et d´´Anal. des Syst., CNRS, Toulouse, France

Volume

18

Issue

3

fYear

1997

fDate

3/1/1997 12:00:00 AM

Firstpage

108

Lastpage

110

Abstract

In this paper an annealing procedure which gives an excess noise reduction both of heavily C-doped resistive structures and GaInP/GaAs Heterojunction Bipolar Transistors (HBTs) of 5 dB is proposed. The investigation of the correlation between the noise generators indicate that the annealing leads to a decrease of noise voltage attributed to a strain reduction both in the intrinsic and in the extrinsic base related to a site switching effect of carbon atoms. The reduction of noise current with annealing is attributed to the surface improvement related passivation process by hydrogen atoms.

Keywords

III-V semiconductors; annealing; carbon; gallium arsenide; gallium compounds; heterojunction bipolar transistors; hydrogen; indium compounds; passivation; semiconductor device noise; C atoms; GaInP-GaAs; H atoms; HBT; annealing procedure; excess noise reduction; heavily C-doped resistive structures; heterojunction bipolar transistors; noise current; noise generators; noise voltage; passivation process; site switching effect; strain reduction; surface improvement; Active noise reduction; Annealing; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Low-frequency noise; Noise generators; Noise reduction; Passivation; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.556096

Filename

556096