DocumentCode
1311403
Title
GaAs MESFET´s on a truly insulating buffer layer: demonstration of the GaAs on insulator technology
Author
Parikh, P.A. ; Chavarkar, P.M. ; Mishra, U.K.
Author_Institution
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Volume
18
Issue
3
fYear
1997
fDate
3/1/1997 12:00:00 AM
Firstpage
111
Lastpage
113
Abstract
We demonstrate for the first time a GaAs on insulator (GOI) technology, with aluminum oxide (Al2O3) formed by the wet oxidation of AlAs as the insulating buffer layer. The insulating buffer gives excellent charge control and eliminates substrate leakage current. The first results of GOI technology include 1.5-μm gate length GOI MESFET´s with f/sub /spl tau//=9 GHz and fmax=45 GHz.
Keywords
III-V semiconductors; Schottky gate field effect transistors; alumina; gallium arsenide; microwave field effect transistors; oxidation; semiconductor-insulator boundaries; 1.5 micron; 45 GHz; 9 GHz; Al/sub 2/O/sub 3/; GOI MESFET; GOI technology; GaAs; GaAs MESFET; GaAs on insulator technology; GaAs-AlGaAs-Al/sub 2/O/sub 3/-GaAs; SHF; alumina; charge control; insulating buffer layer; substrate leakage current elimination; wet oxidation; Buffer layers; FETs; Gallium arsenide; Insulation; Leakage current; MESFETs; Molecular beam epitaxial growth; Oxidation; Phase noise; Substrates;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.556097
Filename
556097
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