Title :
GaAs MESFET´s on a truly insulating buffer layer: demonstration of the GaAs on insulator technology
Author :
Parikh, P.A. ; Chavarkar, P.M. ; Mishra, U.K.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fDate :
3/1/1997 12:00:00 AM
Abstract :
We demonstrate for the first time a GaAs on insulator (GOI) technology, with aluminum oxide (Al2O3) formed by the wet oxidation of AlAs as the insulating buffer layer. The insulating buffer gives excellent charge control and eliminates substrate leakage current. The first results of GOI technology include 1.5-μm gate length GOI MESFET´s with f/sub /spl tau//=9 GHz and fmax=45 GHz.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; alumina; gallium arsenide; microwave field effect transistors; oxidation; semiconductor-insulator boundaries; 1.5 micron; 45 GHz; 9 GHz; Al/sub 2/O/sub 3/; GOI MESFET; GOI technology; GaAs; GaAs MESFET; GaAs on insulator technology; GaAs-AlGaAs-Al/sub 2/O/sub 3/-GaAs; SHF; alumina; charge control; insulating buffer layer; substrate leakage current elimination; wet oxidation; Buffer layers; FETs; Gallium arsenide; Insulation; Leakage current; MESFETs; Molecular beam epitaxial growth; Oxidation; Phase noise; Substrates;
Journal_Title :
Electron Device Letters, IEEE
