Title :
Cone-Type SONOS Flash Memory
Author :
Lee, Gil Sung ; Lee, Jung Hoon ; Park, Il Han ; Cho, Seongjae ; Yun, Jang-Gn ; Li, Dong Hwa ; Kim, Doo Hyun ; Kim, Yoon ; Park, Se Hwan ; Shim, Won Bo ; Kim, Wan Dong ; Lee, Jong Duk ; Shin, Hyungcheol ; Park, Byung-Gook
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., Seoul, South Korea
Abstract :
A novel SONOS Flash memory device, named as a cone-type SONOS memory, is fabricated and analyzed. The main idea of this structure is using a vertical cone-shape silicon channel to improve Flash memory characteristics. By taking advantage of the shape, a great electric-field concentration effect is made. Moreover, the structure has enhanced characteristics of suppressing back-tunneling current. As a result, there are little erase saturation phenomenon and no retention degradation.
Keywords :
field effect memory circuits; flash memories; SONOS flash memory; back-tunneling current; cone-type SONOS memory; erase saturation phenomenon; vertical cone-shape silicon channel; Cone type; SONOS Flash memory; erase saturation; field concentration; retention;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2009.2033080
