DocumentCode :
1311696
Title :
Experimental Demonstration of Multi-Bit Optical Buffer Memory Using 1.55- \\mu{\\hbox {m}} Polarization Bistable Vertical-Cavity Surface-Emitting Lasers
Author :
Katayama, Takeo ; Ooi, Tomohiro ; Kawaguchi, Hitoshi
Author_Institution :
Grad. Sch. of Mater. Sci., Nara Inst. of Sci. & Technol., Ikoma, Japan
Volume :
45
Issue :
11
fYear :
2009
Firstpage :
1495
Lastpage :
1504
Abstract :
We demonstrate a novel all-optical buffer memory using 1.55-μm polarization bistable vertical-cavity surface-emitting lasers (VCSELs). A one-bit data is stored as one of two orthogonal polarization states of a VCSEL in this memory. The polarization state is transferred from the VCSEL to another VCSEL which is optically connected in cascade as a shift register. A 4-bit optical buffer memory is constructed using two sets of the shift-register memory connected in parallel. These results show the technical feasibility of multi-bit optical buffer memory.
Keywords :
buffer storage; flip-flops; laser cavity resonators; light polarisation; optical bistability; optical logic; optical storage; optical switches; quantum well lasers; shift registers; surface emitting lasers; all-optical flip-flop operation; all-optical switching; cascaded VCSEL; multibit optical buffer memory; multiple quantum wells; orthogonal polarization states; polarization bistable lasers; shift register; vertical-cavity surface-emitting lasers; wavelength 1.55 μm; All-optical switching; optical buffer memory; polarization bistability; vertical-cavity surface-emitting laser (VCSEL);
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.2009.2029067
Filename :
5325827
Link To Document :
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