DocumentCode
1311717
Title
Strong High Order Diffraction of Guided Modes in Micro-Cavity Light-Emitting Diodes With Hexagonal Photonic Crystals
Author
Bergenek, Krister ; Wiesmann, Christopher ; Zull, Heribert ; Rumbolz, Christian ; Wirth, Ralph ; Linder, Norbert ; Streubel, Klaus ; Krauss, Thomas F.
Author_Institution
Osram Opto Semicond. GmbH, Regensburg, Germany
Volume
45
Issue
12
fYear
2009
Firstpage
1517
Lastpage
1523
Abstract
Photonic crystals (PhCs) have now been firmly established as an efficient means for light extraction from light emitting diodes (LEDs). We analyze the diffraction properties from thin GaN micro-cavity LEDs with hexagonal lattices that feature three guided TE modes only. In contrast to common design rules, we find that high order diffraction contributes significantly to the light extraction and increases the directionality of the emitted light. The implementation of the PhC leads to an enhancement in light extraction by a factor of up to 1.8 and the directionality of the light is greatly improved with a radiant intensity enhancement factor of 4.3, which can only be explained by the higher order diffraction that has been hitherto neglected. Furthermore, we show that higher order diffraction contributes significantly to the high azimuthal extraction uniformity we observe, suggesting that the use of quasi-crystal lattices is not necessary. We use a model including mode absorption where each in-plane angle of the guided modes is treated separately in order to explain the experimental results.
Keywords
III-V semiconductors; gallium compounds; light diffraction; light emitting diodes; micro-optics; microcavities; photonic crystals; quasicrystals; GaN; diffraction properties; guided TE modes; guided modes; hexagonal lattices; hexagonal photonic crystals; high azimuthal extraction uniformity; high order diffraction; in-plane angle; light directionality; light extraction; microcavity light-emitting diodes; mode absorption; quasicrystal lattices; radiant intensity enhancement factor; thin GaN microcavity LED; Astronomy; Diffraction; Etching; Gallium nitride; Lattices; Light emitting diodes; Photonic band gap; Photonic crystals; Physics; Tellurium; Diffraction; InGaN; light-emitting diode; microcavity; photonic crystal;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.2009.2021958
Filename
5325830
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