• DocumentCode
    1311717
  • Title

    Strong High Order Diffraction of Guided Modes in Micro-Cavity Light-Emitting Diodes With Hexagonal Photonic Crystals

  • Author

    Bergenek, Krister ; Wiesmann, Christopher ; Zull, Heribert ; Rumbolz, Christian ; Wirth, Ralph ; Linder, Norbert ; Streubel, Klaus ; Krauss, Thomas F.

  • Author_Institution
    Osram Opto Semicond. GmbH, Regensburg, Germany
  • Volume
    45
  • Issue
    12
  • fYear
    2009
  • Firstpage
    1517
  • Lastpage
    1523
  • Abstract
    Photonic crystals (PhCs) have now been firmly established as an efficient means for light extraction from light emitting diodes (LEDs). We analyze the diffraction properties from thin GaN micro-cavity LEDs with hexagonal lattices that feature three guided TE modes only. In contrast to common design rules, we find that high order diffraction contributes significantly to the light extraction and increases the directionality of the emitted light. The implementation of the PhC leads to an enhancement in light extraction by a factor of up to 1.8 and the directionality of the light is greatly improved with a radiant intensity enhancement factor of 4.3, which can only be explained by the higher order diffraction that has been hitherto neglected. Furthermore, we show that higher order diffraction contributes significantly to the high azimuthal extraction uniformity we observe, suggesting that the use of quasi-crystal lattices is not necessary. We use a model including mode absorption where each in-plane angle of the guided modes is treated separately in order to explain the experimental results.
  • Keywords
    III-V semiconductors; gallium compounds; light diffraction; light emitting diodes; micro-optics; microcavities; photonic crystals; quasicrystals; GaN; diffraction properties; guided TE modes; guided modes; hexagonal lattices; hexagonal photonic crystals; high azimuthal extraction uniformity; high order diffraction; in-plane angle; light directionality; light extraction; microcavity light-emitting diodes; mode absorption; quasicrystal lattices; radiant intensity enhancement factor; thin GaN microcavity LED; Astronomy; Diffraction; Etching; Gallium nitride; Lattices; Light emitting diodes; Photonic band gap; Photonic crystals; Physics; Tellurium; Diffraction; InGaN; light-emitting diode; microcavity; photonic crystal;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.2009.2021958
  • Filename
    5325830