Title :
Novel AlInAs/InP HEMT
Author :
Aina, O. ; Serio, M. ; Mattingly, M. ; Hempfling, E.
Author_Institution :
Allied-Signal Aerospace Co., Columbia, MD, USA
fDate :
5/1/1990 12:00:00 AM
Abstract :
The fabrication of the first AlInAs/InP HEMT is reported. This device has extrinsic transconductance of 40 mS/mm, gate-drain and drain-source breakdown voltages of 20 V and saturation drain current densities of 0.1 A/mm of gate width. These preliminary results show the potential of the AlInAs/InP heterojunctions for a wide variety of application including microwave power HEMTs.
Keywords :
III-V semiconductors; aluminium compounds; high electron mobility transistors; indium compounds; power transistors; solid-state microwave devices; 20 V; 40 mS; AlInAs-InP; HEMT; III-V semiconductors; drain-source breakdown voltages; extrinsic transconductance; fabrication; gate-drain breakdown voltage; heterojunctions; microwave power transistor application; saturation drain current densities;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900426
