Title :
Low-voltage operation GaAs spike-gate power FET with high power-added efficiency
Author :
Tanaka, Tsuyoshi ; Furukawa, Hidetoshi ; Takenaka, Hiroshi ; Ueda, Tetsuzo ; Fukui, Takeshi ; Ueda, Daisuke
Author_Institution :
Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan
fDate :
3/1/1997 12:00:00 AM
Abstract :
A GaAs power FET with a spike-gate has been developed for high-efficiency operation under extremely low supply voltage less than 1.5 V. The spike-gate provides both low on-resistance of 2.2 Ω/mm and high transconductance of 180 mS/mm without reducing the output impedance or increasing the gate resistance. The implemented device achieved an output power of 31.5 dBm with 70% power-added efficiency at a frequency of 900 MHz. It should be noted that the present device kept PAE of 60% even at a bias of 0.5 V, which is the lowest voltage ever attained
Keywords :
III-V semiconductors; UHF field effect transistors; characteristics measurement; gallium arsenide; power field effect transistors; semiconductor technology; 0.5 to 1.5 V; 180 mS/mm; 60 to 70 percent; 900 MHz; GaAs; gate resistance; high-efficiency operation; low-voltage operation; on-resistance; output impedance; output power; power-added efficiency; spike-gate power FET; supply voltage; transconductance; Batteries; FETs; Frequency; Gallium arsenide; High power amplifiers; Impedance; Knee; Low voltage; Power generation; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
