Title :
Neutron radiation effects in high electron mobility transistors [AlGaAs/GaAs]
Author :
Papastamatiou, M. ; Arpatzanis, Nikos ; Papaioannou, G.J. ; Papastergiou, C. ; Christou, A.
Author_Institution :
Solid State Phys. Section, Athens Univ., Greece
fDate :
3/1/1997 12:00:00 AM
Abstract :
The effect of fast neutron radiation has been investigated in High Electron Mobility Transistors (HEMT´s). Devices with different layer structures have been employed for the better understanding of failure mechanism sources. The deep traps introduced by neutron irradiation in the AlGaAs donor layer have been, for the first time, studied. The application of charge control model allowed the determination of buffer layer degradation and the theoretical estimation of the shift of the threshold voltage
Keywords :
III-V semiconductors; aluminium compounds; deep levels; electron traps; failure analysis; gallium arsenide; high electron mobility transistors; neutron effects; semiconductor device models; semiconductor device reliability; AlGaAs-GaAs; III-V semiconductors; buffer layer degradation; charge control model; deep traps; donor layer; failure mechanism sources; high electron mobility transistors; layer structures; neutron radiation effects; threshold voltage; Buffer layers; Degradation; Electron traps; Estimation theory; Failure analysis; HEMTs; MODFETs; Neutron radiation effects; Threshold voltage; Voltage control;
Journal_Title :
Electron Devices, IEEE Transactions on
