DocumentCode
1311829
Title
Temperature dependent barrier heights in bulk unipolar diodes leading to improved temperature stable performance
Author
Kearney, M.J. ; Kelly, M.J. ; Condie, A. ; Dale, I.
Author_Institution
GEC Hirst Res. Centre, Wembley, UK
Volume
26
Issue
10
fYear
1990
fDate
5/1/1990 12:00:00 AM
Firstpage
671
Lastpage
672
Abstract
Surface states in a Schottky diode lead to a pinning of the Fermi level and a negative temperature coefficient for the barrier height. Calculations show that the barrier height of an epitaxially grown, bulk, unipolar diode actually increases with temperature, typically by about 0.4 meV K-1 for GaAs between -40 degrees C and +80 degrees C. This novel effect can be used to explain the improved temperature stability of devices employing these diodes as direct retrofit replacements for conventional Schottky diodes.
Keywords
III-V semiconductors; gallium arsenide; semiconductor diodes; stability; -40 to 80 degC; GaAs; bulk unipolar diodes; epitaxially grown; temperature dependent barrier height; temperature stability; temperature stable performance;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19900439
Filename
82783
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