Title :
Multiple Sb ion implantation for deep-submicron pMOS channel doping
Author :
Suzuki, Kunihiro ; Satoh, Akira ; Sugii, Toshihiro
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
fDate :
3/1/1997 12:00:00 AM
Abstract :
We propose a channel doping technology for pMOSFET´s in which Sb is multiply ion implanted to produce a uniform doping profile in the region deeper than the minimum projected range of the multiple ion implantation. We derive a threshold voltage model and show how to realize this uniform doping profile, which is verified with experimental data. We study the short-channel effect of this device using a two-dimensional (2-D) device simulator, and show that this transistor can readily operate with a gate length of down to 0.1 μm
Keywords :
MOSFET; antimony; doping profiles; ion implantation; semiconductor device models; silicon-on-insulator; 0.1 mum; SOI substrate; Si:Sb-SiO2; channel doping technology; deep-submicron pMOS channel doping; gate length; minimum projected range; multiple Sb ion implantation; pMOSFET; short-channel effect; threshold voltage model; two-dimensional device simulator; uniform doping profile; Capacitance; Counting circuits; Degradation; Doping profiles; Ion implantation; MOSFET circuits; Semiconductor process modeling; Temperature dependence; Threshold voltage; Two dimensional displays;
Journal_Title :
Electron Devices, IEEE Transactions on
