• DocumentCode
    1311850
  • Title

    Heavily doped emitter as a lossy transmission line

  • Author

    Jankovic, N.D.

  • Author_Institution
    El-Microelectronics, Nis, Yugoslavia
  • Volume
    26
  • Issue
    10
  • fYear
    1990
  • fDate
    5/1/1990 12:00:00 AM
  • Firstpage
    675
  • Lastpage
    677
  • Abstract
    The analogy between the transport of minority carriers in heavily doped bipolar emitters and wave propagation along a lossy transmission line is described. It is used to theoretically derive Selvakumar and Roulston´s (1987) novel relation between transport parameters and to explain its physical origin.
  • Keywords
    bipolar transistors; heavily doped semiconductors; minority carriers; semiconductor device models; transmission line theory; heavily doped bipolar emitters; lossy transmission line; minority carriers; transistors; transport parameters; wave propagation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900442
  • Filename
    82786
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1311850