Title :
Heat flow analysis for EOS/ESD protection device design in SOI technology
Author :
Raha, Prasun ; Ramaswamy, Sridhar ; Rosenbaum, Elyse
Author_Institution :
Illinois Univ., Urbana, IL, USA
fDate :
3/1/1997 12:00:00 AM
Abstract :
Power-to-failure versus time-to-failure profiles for SOI protection devices are generated through a consideration of Joule heating. Experimental results are presented to justify assumptions made in the investigation of heat flow in SOI devices. A lossy transmission line equivalent model has been used to model the heat diffusion problem. A design space for multifinger NMOS protection devices has been developed on the basis of self-heating constraints. The method of images has been used to transform the multifinger device to an equivalent single-finger device to simplify the heat flow analysis
Keywords :
MOSFET; buried layers; electrostatic discharge; heat transfer; protection; semiconductor device models; semiconductor device reliability; silicon-on-insulator; thermal diffusion; transmission line theory; EOS/ESD protection device design; Joule heating; SOI protection devices; buried oxide thickness; design space; equivalent single-finger device; grounded-gate MOSFET; heat diffusion problem; heat flow analysis; lossy transmission line equivalent model; method of images; multifinger NMOS protection devices; power profiles; power-to-failure; self-heating constraints; time-to-failure; Earth Observing System; Electric breakdown; Electrostatic discharge; Heating; MOSFET circuits; Protection; Silicon on insulator technology; Temperature; Thermal conductivity; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
