Theoretical and experimental characteristics of the insulated-gate thyristor (IGTH)

Author

Ajit, J.S.

Author_Institution

Int. Rectifier Corp., El Segundo, CA, USA

Volume

44

Issue

3

fYear

1997

fDate

3/1/1997 12:00:00 AM

Firstpage

481

Lastpage

488

Abstract

A Insulated-Gate Thyristor (IGTH) design consisting of square cells with high density of MOS channels modulating the resistance of the base region of the NPN transistor of the thyristor structure is described. The on-state characteristics of IGTH structures including the effect of the lateral parasitic bipolar transistor are studied with the help of numerical device simulations and are analytically modeled by simple analytical equations. The variation of IGTH characteristics with temperature and electron-irradiation dose is experimentally studied and the behavior is explained with the help of analytical equations. The modeling results were found to be in good agreement with experimental results obtained on many lots of 600 V-1200 V Insulated-Gate Thyristors (IGTH) fabricated with an active area of 1.3 mm²-0.35 cm². The analytical models developed can also be applied to design and predict the characteristics of other MOS-gated thyristor structures

Keywords

MOS-controlled thyristors; characteristics measurement; electron beam effects; semiconductor device models; 600 to 1200 V; IGTH; MOS channels; active area; electron-irradiation dose; insulated-gate thyristor; lateral parasitic bipolar transistor; numerical device simulations; on-state characteristics; square cells; Analytical models; Bipolar transistors; Current density; Equations; Helium; Insulation; MOSFET circuits; Numerical simulation; Temperature; Thyristors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.556159

Filename

556159