Sub-2 nm Size-Tunable High-Density Pt Nanoparticle Embedded Nonvolatile Memory

Author

Yun, Minseong ; Mueller, David W. ; Hossain, Maruf ; Misra, Veena ; Gangopadhyay, Shubhra

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Missouri, Columbia, MO, USA

Volume

30

Issue

12

fYear

2009

Firstpage

1362

Lastpage

1364

Abstract

The charge-storage characteristics of a metal-oxide-semiconductor (MOS) structure containing size-tunable sub-2 nm Pt nanoparticles (NPs) between Al₂O₃ tunneling and capping oxide layers were studied. Significantly different amounts of memory window were obtained with the different sizes of Pt NP embedded MOS structures and reached a maximum of 4.3 V using a 1.14 nm Pt NP, which has the strongest charging capability caused by optimum size and the largest particle density obtained in our deposition method. Satisfactory long-term nonvolatility was attained in a low electric field due to the Coulomb blockade and quantum confinement effects in ~ 1 nm Pt NP. These properties are very promising in view of device application.

Keywords

Coulomb blockade; MIS structures; elemental semiconductors; nanoelectronics; nanoparticles; particle size; platinum; random-access storage; silicon; tunnelling; Coulomb blockade; Pt nanoparticles; Si-Al₂O₃-Pt; capping oxide layers; charge-storage characteristics; charging capability; high-density Pt nanoparticle embedded nonvolatile memory; long-term nonvolatility; memory window; metal-oxide-semiconductor structure; optimum size; particle density; quantum confinement effects; size 1.14 nm; tunneling; Nanoparticle (NP); nonvolatile memory (NVM); size-tunable platinum;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2009.2033618

Filename

5325873