Title :
Selective plasma etching of Si from GaAs-on-Si wafers for microwave via-hole formation
Author :
Turner, G.W. ; Chen, C.L. ; Connors, M.K. ; Mohoney, L.J. ; McGilvary, W.L.
Author_Institution :
Lincoln Lab., MIT, Lexington, MA, USA
fDate :
6/21/1990 12:00:00 AM
Abstract :
Selective plasma etching has been used to form via holes in GaAs-on-Si wafers that are superior to the holes formed by conventional methods in semi-insulating GaAs wafers. The plasma etching technique has a variety of potential microwave device applications.
Keywords :
III-V semiconductors; MMIC; gallium arsenide; integrated circuit technology; semiconductor technology; sputter etching; GaAs-Si; GaAs-on-Si wafers; MMIC fabrications; Si etching; microwave via-hole formation; plasma etching technique; selective plasma etching; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900559
