• DocumentCode
    1312030
  • Title

    Selective plasma etching of Si from GaAs-on-Si wafers for microwave via-hole formation

  • Author

    Turner, G.W. ; Chen, C.L. ; Connors, M.K. ; Mohoney, L.J. ; McGilvary, W.L.

  • Author_Institution
    Lincoln Lab., MIT, Lexington, MA, USA
  • Volume
    26
  • Issue
    13
  • fYear
    1990
  • fDate
    6/21/1990 12:00:00 AM
  • Firstpage
    854
  • Lastpage
    855
  • Abstract
    Selective plasma etching has been used to form via holes in GaAs-on-Si wafers that are superior to the holes formed by conventional methods in semi-insulating GaAs wafers. The plasma etching technique has a variety of potential microwave device applications.
  • Keywords
    III-V semiconductors; MMIC; gallium arsenide; integrated circuit technology; semiconductor technology; sputter etching; GaAs-Si; GaAs-on-Si wafers; MMIC fabrications; Si etching; microwave via-hole formation; plasma etching technique; selective plasma etching; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900559
  • Filename
    82812
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1312030