Title :
Drive Currents and Leakage Currents in InSb and InAs Nanowire and Carbon Nanotube Band-to-Band Tunneling FETs
Author :
Khayer, M. Abul ; Lake, Roger K.
Author_Institution :
Dept. of Electr. Eng., Univ. of California Riverside, Riverside, CA, USA
Abstract :
The prototypical device to exploit cold carrier injection is the nanowire (NW) or carbon nanotube (CNT) band-to-band tunneling field-effect transistor. Understanding the effect of material choice and NW or CNT diameter on the drive and leakage currents is critical. A zero-order analytical approach is described for assessing and comparing the effect of different materials and diameters on the drive current, the leakage current, and the required electric fields.
Keywords :
carbon nanotubes; field effect transistors; indium compounds; leakage currents; nanowires; InAs; InSb; band-to-band tunneling FET; band-to-band tunneling field-effect transistor; carbon nanotube; cold carrier injection; drive currents; leakage currents; nanowire; prototypical device; zero-order analytical approach; ${bf k} cdot {bf p}$ method; BTBT field-effect transistors (BTBTFETs); Band-to-band tunneling (BTBT); InAs nanowire (NW); InSb NW; carbon nanotube (CNT); complex bandstructure;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2009.2034277
