• DocumentCode
    1312433
  • Title

    Impulse-doped GaAs power FETs for high efficiency operation

  • Author

    Smith, R.P. ; Seielstad, D.A. ; Ho, Paul ; Smith, P.M. ; Fabian, W. ; Ballingall, J.M.

  • Author_Institution
    General Electric Co., Syracuse, NY
  • Volume
    24
  • Issue
    10
  • fYear
    1988
  • fDate
    5/12/1988 12:00:00 AM
  • Firstpage
    597
  • Lastpage
    598
  • Abstract
    The authors have fabricated impulse-doped GaAs power FETs demonstrating 59% power-added efficiency with 10.4 dB associated gain and 0.33 W/mm at 10 GHz. To the best of their knowledge, this is the highest power-added efficiency ever reported at X-band for a GaAs FET
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; power transistors; semiconductor doping; solid-state microwave devices; 10 GHz; 10.4 dB; 59 percent; GaAs; X-band; gain; high efficiency operation; impulse doping; microwave transistor; power FETs; power-added efficiency;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    8282
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1312433