OxRAM-based non volatile flip-flop in 28nm FDSOI

Author

Jovanovic, N. ; Thomas, O. ; Vianello, E. ; Portal, J.-M. ; Nikolic, B. ; Naviner, L.

Author_Institution

LETI, CEA, Grenoble, France

fYear

2014

fDate

22-25 June 2014

Firstpage

141

Lastpage

144

Abstract

This paper presents a robust OxRAM-based nonvolatile flip-flop (NVFF) solution, designed for deep nano-scaled CMOS technologies. Forming, set and reset operations rely on a reliable design approach using thin gate oxide CMOS. The NVFF is benchmarked against a standard FF in 28nm CMOS FDSOI. Non-volatility is added with minimal impact on the FF performances.

Keywords

CMOS logic circuits; CMOS memory circuits; flip-flops; integrated circuit design; integrated circuit reliability; logic design; nanoelectronics; random-access storage; silicon-on-insulator; FDSOI; NVFF solution; OxRAM-based nonvolatile flip-flop; deep nano-scaled CMOS technology; reliable design approach; reset operations; set operations; size 28 nm; standard FF performances; thin gate oxide CMOS; CMOS integrated circuits; CMOS technology; Flip-flops; Latches; Nonvolatile memory; Reliability; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

New Circuits and Systems Conference (NEWCAS), 2014 IEEE 12th International

Conference_Location

Trois-Rivieres, QC

Type

conf

DOI

10.1109/NEWCAS.2014.6934003

Filename

6934003

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=131249