Title :
A very-high impedance, high-swing cascode stage for sub-micron analog VLSI
Author :
Tiiliharju, E. ; Zarabadi, Seged ; Ismail, Mohammed ; Halonen, Kari
Author_Institution :
Electron. Circuit Design Lab., Helsinki Univ. of Technol., Finland
fDate :
7/1/1997 12:00:00 AM
Abstract :
In this article we describe a novel sub-micron analog VLSI circuit which can be used as a cascode current source, current mirror, or transresistance stage amplifier with maximum output swing capability. The described circuit, which is also viewed as a “super-MOS” device, displays both gain-boosting and optimum biasing of the cascode stage for low-voltage applications
Keywords :
MOS analogue integrated circuits; VLSI; cascode current source; current mirror; gain-boosting; high-impedance circuit; low-voltage applications; sub-micron analog VLSI circuit; super-MOS device; transresistance stage amplifier; Bandwidth; Bipolar transistor circuits; Bipolar transistors; Degradation; Feedback amplifiers; Impedance; MOSFETs; Threshold voltage; Very large scale integration; Voltage control;
Journal_Title :
Circuits and Devices Magazine, IEEE
