• DocumentCode
    1312676
  • Title

    A Compact V-Band Bandpass Filter in IPD Technology

  • Author

    Hsiao, Chih-Yin ; Hsu, Shawn S H ; Chang, Da-Chiang

  • Author_Institution
    Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
  • Volume
    21
  • Issue
    10
  • fYear
    2011
  • Firstpage
    531
  • Lastpage
    533
  • Abstract
    This work presents a miniaturized bandpass filter in V-band using integrated passive device (IPD) technology with thick metal layers and Benzocyclobutene (BCB) dielectric on a glass substrate. The proposed filter, comprised of two stepped-impedance resonators with quarter-wave short-circuited stubs and floating pads, has low passband insertion loss and high stopband attenuation in a compact size. The fabricated filter has an insertion loss of 2.46 dB at the center frequency of 59 GHz, and a 3 dB bandwidth from 55.7 to 62.2 GHz. The core size of this filter is only 0.32×0.4 mm2(0.064 ×0.08 λ02).
  • Keywords
    band-pass filters; dielectric materials; millimetre wave filters; millimetre wave resonators; BCB dielectric; IPD technology; benzocyclobutene dielectric; compact V-band bandpass filter; floating pads; frequency 55.7 GHz to 62.2 GHz; glass substrate; high-stopband attenuation; integrated passive device; loss 2.46 dB; low-passband insertion loss; quarter-wave short-circuited stubs; stepped-impedance resonators; thick-metal layers; Attenuation; Couplings; Filtering theory; Insertion loss; Metals; Substrates; Wireless communication; Filter; V-band; integrated passive device (IPD); resonator;
  • fLanguage
    English
  • Journal_Title
    Microwave and Wireless Components Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1531-1309
  • Type

    jour

  • DOI
    10.1109/LMWC.2011.2165534
  • Filename
    6007150