• DocumentCode
    1313022
  • Title

    Co-doping effects in rare-earth-doped planar waveguides

  • Author

    Bonar, J.R. ; Aitchison, J.S.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
  • Volume
    143
  • Issue
    5
  • fYear
    1996
  • fDate
    10/1/1996 12:00:00 AM
  • Firstpage
    293
  • Lastpage
    297
  • Abstract
    Results on rare-earth-doped lasers and amplifiers in planar silica waveguides fabricated by flame hydrolysis deposition (FHD) and reactive ion etching (RIE) are presented. The authors review their results on the optimisation of doping levels, co-dopant species, fusing temperature, fusing time and glass composition to reduce both scatter loss and ion-ion interactions. Two different doping techniques have been investigated and the planar films produced by each are compared. These glasses have been used to produce waveguide lasers in both Nd3+ and Er3+ doped silica
  • Keywords
    erbium; neodymium; optical fabrication; optical planar waveguides; solid lasers; sputter etching; waveguide lasers; Er3+ doped silica; Nd3+ doped silica; SiO2:Er; SiO2:Nd; co-dopant species; co-doping effects; doping level optimisation; doping techniques; flame hydrolysis deposition; fusing temperature; fusing time; glass composition; ion-ion interactions; planar films; planar silica waveguides; rare-earth-doped laser amplifiers; rare-earth-doped lasers; rare-earth-doped planar waveguides; reactive ion etching; review; scatter loss; waveguide lasers;
  • fLanguage
    English
  • Journal_Title
    Optoelectronics, IEE Proceedings -
  • Publisher
    iet
  • ISSN
    1350-2433
  • Type

    jour

  • DOI
    10.1049/ip-opt:19960732
  • Filename
    556351