DocumentCode
1313022
Title
Co-doping effects in rare-earth-doped planar waveguides
Author
Bonar, J.R. ; Aitchison, J.S.
Author_Institution
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Volume
143
Issue
5
fYear
1996
fDate
10/1/1996 12:00:00 AM
Firstpage
293
Lastpage
297
Abstract
Results on rare-earth-doped lasers and amplifiers in planar silica waveguides fabricated by flame hydrolysis deposition (FHD) and reactive ion etching (RIE) are presented. The authors review their results on the optimisation of doping levels, co-dopant species, fusing temperature, fusing time and glass composition to reduce both scatter loss and ion-ion interactions. Two different doping techniques have been investigated and the planar films produced by each are compared. These glasses have been used to produce waveguide lasers in both Nd3+ and Er3+ doped silica
Keywords
erbium; neodymium; optical fabrication; optical planar waveguides; solid lasers; sputter etching; waveguide lasers; Er3+ doped silica; Nd3+ doped silica; SiO2:Er; SiO2:Nd; co-dopant species; co-doping effects; doping level optimisation; doping techniques; flame hydrolysis deposition; fusing temperature; fusing time; glass composition; ion-ion interactions; planar films; planar silica waveguides; rare-earth-doped laser amplifiers; rare-earth-doped lasers; rare-earth-doped planar waveguides; reactive ion etching; review; scatter loss; waveguide lasers;
fLanguage
English
Journal_Title
Optoelectronics, IEE Proceedings -
Publisher
iet
ISSN
1350-2433
Type
jour
DOI
10.1049/ip-opt:19960732
Filename
556351
Link To Document