Title :
Acoustically coupled thickness-mode AIN-on-Si band-pass filters-part I: principle and devices
Author :
Pan, Wanling ; Thakar, Vikram A. ; Rais-Zadeh, Mina ; Ayazi, Farrokh
Author_Institution :
Georgia Inst. of Technol., Atlanta, GA, USA
fDate :
10/1/2012 12:00:00 AM
Abstract :
In this, the first of two papers, we present the working principle and the implementation of laterally acoustically coupled thickness-mode thin-film piezoelectric-on-substrate (TPoS) filters. This type of filter offers low insertion loss and small bandwidth in a broad frequency range- from a few hundred megahertz up to a few gigahertz-and occupy a small chip area. In this paper, we discuss several design concerns, including the choice of materials for TPoS filters. We demonstrate a design for an air-suspended AlN-on-Si filter, which offers a low insertion loss of 2.4 dB at 2.877 GHz. The bandwidth of this filter is 12 MHz with a return loss of better than 30 dB. In Part II of this paper, we present a comprehensive analysis of the effect of physical layout parameters on the frequency response of TPoS filters.
Keywords :
III-V semiconductors; UHF filters; aluminium compounds; band-pass filters; elemental semiconductors; silicon; surface acoustic wave filters; thin film devices; wide band gap semiconductors; AlN; SAW devices; Si; TPoS filters; acoustically coupled thickness-mode band-pass filters; air-suspended filter; bandwidth 12 MHz; frequency 2.877 GHz; insertion loss; laterally acoustically coupled thickness-mode thin-film piezoelectric-on-substrate filters; loss 2.4 dB; Band pass filters; Couplings; Electrodes; Insertion loss; Piezoelectric transducers; Resonator filters; Zinc oxide;
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
DOI :
10.1109/TUFFC.2012.2451