Title :
Microwave Noise and FET Devices
Author :
Danneville, François
Author_Institution :
Inst. d´´Electron. de Microelectron. et de Nanotechnol. Unite Mixte de Recherches, Centre Nat. de la Rech. Sci., Villeneuve-d´´Ascq, France
Abstract :
In this article, a short presentation of available FET technologies (GaAs MESFET, ΠI-V HEMT, and silicon CMOS) has been presented. Why minimum NF is suitable to benchmark different low-noise technologies has been discussed. Following this, basic concepts related to thermal noise in FETs and the reason why such technologies feature outstanding low-noise performance was illustrated/ and a short survey of minimum NF evolution has been presented. InP HEMT technology undoubtedly constitutes the best low-noise technology (especially to address applications in W or G Band). The noise performance of silicon MOSFET technology/ which is widely used in many applications because of its low cost, does not outperform that of GaAs pHEMT technology/ unless channel engineering is performed.
Keywords :
CMOS integrated circuits; III-V semiconductors; MOSFET; Schottky gate field effect transistors; elemental semiconductors; field effect MIMIC; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device noise; thermal noise; FET devices; G band; GaAs; III-V HEMT; InP; MESFET; Si; W band; frequency 0.15 GHz to 0.225 GHz; frequency 56 GHz to 100 GHz; low-noise technology; microwave noise; silicon CMOS; silicon MOSFET technology; thermal noise; FET circuits; Gallium arsenide; HEMTs; Logic gates; Noise measurement; Silicon;
Journal_Title :
Microwave Magazine, IEEE
DOI :
10.1109/MMM.2010.937731
