Modeling GaN: Powerful but Challenging

As GaN technology has developed, first in research laboratories and more recently in multiple commercial device manufacturers, the demand for improved nonlinear models has grown alongside the device process improvements. The need for improved models for GaN is twofold: first, GaN devices have unique nuances in behavior to be addressed; second, there is a desire for improved accuracy to take full advantage of the performance wins to be gained by GaN HEMT performance in the areas of high efficiency and high-power operation.