Title :
An Investigation of Linearity Performance and Intermodulation Distortion of GME CGT MOSFET for RFIC Design
Author :
Ghosh, Pujarini ; Haldar, Subhasis ; Gupta, R.S. ; Gupta, Mridula
Author_Institution :
Dept. of Electron. Sci., Univ. of Delhi, New Delhi, India
Abstract :
In this paper, an extensive study on the intermodulation distortion and the linearity of gate-material-engineered cylindrical-gate MOSFET (GME CGT MOSFET) has been done, and the influence of technology variations such as channel length and gate material workfunction variations is explored using an ATLAS 3-D device simulator. The simulation results reveal that the GME CGT MOSFET design displays a significant enhancement in the device´s linearity and intermodulation distortion performance in terms of the figure-of-merit metrics VIP2, VIP3, IIP3, and IMD3 and the higher order transconductance coefficients gm1, gm2, and gm3. The results are, thus, useful for optimizing the device bias point for RFIC design with higher efficiency and better linearity performance.
Keywords :
MOSFET; integrated circuit design; intermodulation distortion; radiofrequency integrated circuits; ATLAS 3D device simulator; GME CGT MOSFET design; IIP3; IMD3; RFIC design; VIP2; VIP3; channel length; device bias point; device linearity; figure-of-merit metrics; gate material workfunction variations; gate-material-engineered cylindrical-gate MOSFET; higher order transconductance coefficients; intermodulation distortion performance; linearity performance; technology variations; Intermodulation distortion; Linearity; Logic gates; MOSFET circuits; Metals; Performance evaluation; Radio frequency; ATLAS; cylindrical-gate (CGT) MOSFET; gate material engineering (GME); single metal gate (SMG);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2012.2219537
