Extraction of an Electrothermal Mobility Model for AlGaN/GaN Heterostructures

Author

Hjelmgren, Hans ; Thorsell, Mattias ; Andersson, Kristoffer ; Rorsman, Niklas

Author_Institution

Microwave Electron. Lab., Chalmers Univ. of Technol., Göteborg, Sweden

Volume

59

Issue

12

fYear

2012

Firstpage

3344

Lastpage

3349

Abstract

An electron mobility model for AlGaN/GaN heterostructures taking both the lattice temperature and electric field into account is proposed. The numerical device simulation of an ungated Al_0.25Ga_0.75N/GaN HEMT structure on a 4H-SiC substrate is compared to measured electrical characteristics. Mobility model parameters are extracted by comparing isothermal numerical simulations with microwave (6 GHz) large-signal measurements. The extracted model was used in static simulations, showing good agreement with measurements.

Keywords

III-V semiconductors; aluminium compounds; electric fields; gallium compounds; high electron mobility transistors; microwave measurement; numerical analysis; silicon compounds; wide band gap semiconductors; 4H substrate; Al_0.25Ga_0.75N-GaN; HEMT structure; SiC; electric field; electrical characteristics; electrothermal mobility model extraction; frequency 6 GHz; isothermal numerical simulations; lattice temperature; microwave large-signal measurements; numerical device simulation; static simulations; Aluminum gallium nitride; Gallium nitride; HEMTs; Semiconductor device measurement; Temperature dependence; Temperature measurement; Gallium nitride; HEMTs; heterojunctions; numerical simulation;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2012.2218608

Filename

6327647