Title :
Extraction of an Electrothermal Mobility Model for AlGaN/GaN Heterostructures
Author :
Hjelmgren, Hans ; Thorsell, Mattias ; Andersson, Kristoffer ; Rorsman, Niklas
Author_Institution :
Microwave Electron. Lab., Chalmers Univ. of Technol., Göteborg, Sweden
Abstract :
An electron mobility model for AlGaN/GaN heterostructures taking both the lattice temperature and electric field into account is proposed. The numerical device simulation of an ungated Al0.25Ga0.75N/GaN HEMT structure on a 4H-SiC substrate is compared to measured electrical characteristics. Mobility model parameters are extracted by comparing isothermal numerical simulations with microwave (6 GHz) large-signal measurements. The extracted model was used in static simulations, showing good agreement with measurements.
Keywords :
III-V semiconductors; aluminium compounds; electric fields; gallium compounds; high electron mobility transistors; microwave measurement; numerical analysis; silicon compounds; wide band gap semiconductors; 4H substrate; Al0.25Ga0.75N-GaN; HEMT structure; SiC; electric field; electrical characteristics; electrothermal mobility model extraction; frequency 6 GHz; isothermal numerical simulations; lattice temperature; microwave large-signal measurements; numerical device simulation; static simulations; Aluminum gallium nitride; Gallium nitride; HEMTs; Semiconductor device measurement; Temperature dependence; Temperature measurement; Gallium nitride; HEMTs; heterojunctions; numerical simulation;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2012.2218608
