Device Performance of Graphene Nanoribbon Field-Effect Transistors in the Presence of Line-Edge Roughness

Author

Goharrizi, Arash Yazdanpanah ; Pourfath, Mahdi ; Fathipour, Morteza ; Kosina, Hans

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Tehran, Tehran, Iran

Volume

59

Issue

12

fYear

2012

Firstpage

3527

Lastpage

3532

Abstract

The electrical characteristics of armchair edge graphene nanoribbon field-effect transistors in the presence of line-edge roughness scattering are studied. Self-consistent atomistic simulations based on the nonequilibrium Green´s function formalism are employed. A tight binding model incorporating the third nearest neighbor interaction and edge bond relaxation is used to describe the electronic bandstructure. The effect of geometrical and roughness parameters on the on-current, the off -current, subthreshold swing, and the transconductance is investigated.

Keywords

Green´s function methods; field effect transistors; graphene; nanoribbons; semiconductor device models; tight-binding calculations; armchair edge graphene nanoribbon field-effect transistors; device performance; edge bond relaxation; electrical characteristics; electronic band structure; line-edge roughness; line-edge roughness scattering; nonequilibrium Green´s function formalism; self-consistent atomistic simulations; subthreshold swing; third nearest neighbor interaction; tight binding model; transconductance; Correlation; Logic gates; Photonic band gap; Transconductance; Transistors; Tunneling; Device simulation; graphene field-effect transistors; graphene nanoribbon; nonequilibrium Green´s function (NEGF); quantum transport;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2012.2218817

Filename

6327652