Shot Noise Suppression in Single Electron Transistors

Author

Babiker, Sharief F. ; Naeem, Rania

Author_Institution

Dept. of Electr. & Electron. Eng., Univ. of Khartoum, Khartoum, Sudan

Volume

11

Issue

6

fYear

2012

Firstpage

1267

Lastpage

1272

Abstract

Shot noise in a single electron transistor coupled to a dissipative environment is studied. The evolution of the charging process is modeled using classical circuit equations. The distribution of time between tunnel events in the presence of series coupling resistances is derived and used in modeling the stochastic tunneling processes. It is shown that resistive series elements result in a suppression of the Fano factor, below the theoretical 0.5 limit.

Keywords

electric resistance; electron spin polarisation; photoemission; semiconductor device models; semiconductor device noise; shot noise; single electron transistors; stochastic processes; tunnelling; Fano factor suppression; charging process evolution; circuit equations; dissipative environment; resistive series elements; series coupling resistances; shot noise suppression; single electron transistors; stochastic tunneling processes; time distribution; tunnel events; Capacitance; Couplings; Junctions; Mathematical model; Noise; Resistance; Tunneling; Correlation; noise; single electron transistors (SETs); tunneling;

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2012.2223713

Filename

6327675