Temperature and Light Induced Effects on the Capacitance of 4H-SiC Schottky Photodiodes

Author

Mazzillo, Massimo ; Sciuto, Antonella ; Catania, Giuseppe ; Roccaforte, Fabrizio ; Raineri, Vito

Author_Institution

R&D IMS, STMicroelectron., Catania, Italy

Volume

12

Issue

5

fYear

2012

fDate

5/1/2012 12:00:00 AM

Firstpage

1127

Lastpage

1130

Abstract

The capacitance plays a key role in determining the timing performances of a detector. To date, this parameter has never been fully investigated in the study of SiC photodiodes electro-optical characteristics. In this paper, we report on the capacitance dependence of interdigitated 4H-SiC Schottky photodiodes on different operating parameters like reverse bias, temperature, light irradiance and illumination wavelength.

Keywords

Schottky diodes; capacitance; electro-optical devices; photodetectors; photodiodes; silicon compounds; wide band gap semiconductors; SiC; detector timing performance determination; electrooptical characteristics; illumination wavelength; interdigitated Schottky photodiode capacitance; light induced effects; light irradiance; operating parameters; reverse bias; temperature effects; Capacitance; Capacitance measurement; Capacitance-voltage characteristics; Photodiodes; Semiconductor device measurement; Temperature measurement; Wavelength measurement; 4H-SiC Schottky photodiode; Capacitance; light irradiance; temperature;

fLanguage

English

Journal_Title

Sensors Journal, IEEE

Publisher

ieee

ISSN

1530-437X

Type

jour

DOI

10.1109/JSEN.2011.2166541

Filename

6009160