Title :
Optimization of integrated dickson voltage-multipliers for RF energy harvesting
Author :
Michelon, Dino ; Bergeret, E. ; Di Giacomo, Antonio ; Pannier, P.
Author_Institution :
IM2NP, Marseille, France
Abstract :
This paper presents the performance optimization of a UHF Dickson voltage-multiplier used for Radio-Frequency Energy Harvesting in 130 nm CMOS technology. The main axis of intervention is the strong reduction of parasitic capacitance with layout modifications. An improvement of existing pads is proposed in order to reduce the capacitive coupling. A novel Schottky diode is proposed as well. The latter is characterized by low area occupation and low parasitic capacitance without compromising forward current capabilities. A complete electrical characterization of the new device is included. Time and cost constraints prevented major manufacturing modifications (ex. technology node, circuit topology) yet a remarkable gain in performance is demonstrated. On-wafer measures of a 3-cells Dickson voltage-multiplier RF/DC efficiency will highlight the improvements.
Keywords :
CMOS analogue integrated circuits; Schottky diodes; UHF integrated circuits; capacitance; energy harvesting; optimisation; voltage multipliers; CMOS technology; RF energy harvesting; RF-DC efficiency; Schottky diode; UHF Dickson voltage-multiplier optimization; capacitive coupling reduction; cost constraint prevention; parasitic capacitance reduction; radiofrequency energy harvesting; size 130 nm; time constraint prevention; CMOS integrated circuits; Metals; Parasitic capacitance; Radio frequency; Schottky diodes; Standards; CMOS analog integrated circuits; RF energy harvesting; Schottky diodes; layout; low-power CMOS; multi-stage rec-tifier; parasitic capacitance; radio frequency;
Conference_Titel :
New Circuits and Systems Conference (NEWCAS), 2014 IEEE 12th International
Conference_Location :
Trois-Rivieres, QC
DOI :
10.1109/NEWCAS.2014.6934079
