DocumentCode :
1314212
Title :
High-Power 2 
Diode Lasers With Asymmetric Waveguide
Author :
Chen, Jianfeng ; Kipshidze, Gela ; Shterengas, Leon
Author_Institution :
Dept. of Electr. & Comput. Eng., Stony Brook Univ., Stony Brook, NY, USA
Volume :
46
Issue :
10
fYear :
2010
Firstpage :
1464
Lastpage :
1469
Abstract :
Asymmetric laser heterostructure was developed to improve beam properties of GaSb-based diode lasers emitting near 2 μm. It was demonstrated that the lasers with narrow waveguide and asymmetric claddings could have fast axis beam divergence below 40°. High-power diode lasers with 100-μm-wide output aperture generate more than 1.5 W of continuous wave (CW) output power in a beam with fast axis beam divergence of 50°. Power conversion efficiency of the 2 μm emitters peaked at 28%. CW threshold current density of 85 A/cm2 was achieved at 20°C. Passively cooled 18-element linear laser arrays generated more than 10 W of CW power at 50 A. Above 3 W of CW power was obtained from 7-fiber bundle at 7 A.
Keywords :
III-V semiconductors; gallium compounds; optical fibre cladding; optical waveguides; semiconductor lasers; GaSb; asymmetric claddings; asymmetric laser heterostructure; asymmetric waveguide; continuous wave output power; high-power diode lasers; temperature 20 degC; wavelength 2 mum; Diode lasers; Laser beams; Measurement by laser beam; Optical waveguides; Semiconductor lasers; Threshold current; Waveguide lasers; Asymmetric waveguide; beam divergence; diode lasers; fiber bundle; high power; laser array;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.2010.2051021
Filename :
5565335
Link To Document :
