مرکز منطقه ای اطلاع رساني علوم و فناوري - High-Throughput Screening of Amorphous <formula formulatype="inline"> <img src="/images/tex/20604.gif" alt="\\hbox {Y}_{2} \\hbox {O}_{3}"> </formula>–<formula formulatype="inline"> <img src="/images/tex/20499.gif" alt="\\hbox {TiO}

Title :

High-Throughput Screening of Amorphous $\\hbox {Y}_{2} \\hbox {O}_{3}$ – $\\hbox {TiO}_{2}\\hbox {/}\\</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Chang, Kao-Shuo ; Green, Martin L. ; Schenck, Peter K. ; Levin, Igor ; Venkatasubramanian, Eswaranand</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author_Institution : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Dept. of Mater. Sci. & Eng., Nat. Cheng Kung Univ., Tainan, Taiwan</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Volume : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>59</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Issue : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>12</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fYear : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>2012</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Firstpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>3212</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Lastpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>3216</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Abstract : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>In this paper, an approach using native SiO<sub>2</sub> to make amorphous higher dielectric constant films based on the Y<sub>2</sub>O<sub>3</sub>-TiO<sub>2</sub>/SiO<sub>2</sub>/Si compositional spread libraries by combinatorial pulsed laser deposition is reported. The key feature of the experiment is that combinatorial methodology is used to quickly screen the potential high-dielectric-constant films out of a large composition parameter space. Scanning X-ray microdiffractometry and high-resolution transmission electron microscopy results show that the TiO<sub>2</sub>-rich end is amorphous after 500°C anneal. A wide composition range near the TiO<sub>2</sub>-rich end, exhibiting amorphousness, dielectric constants of 30-50, and reasonably low <i>J</i><sub>L</sub> (<; 10<sup>-5</sup> A/cm<sup>2</sup>), may be of great interest for a gate-last process flow for advanced gate stacks.</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>X-ray diffractometers; amorphous semiconductors; annealing; high-k dielectric thin films; permittivity; pulsed laser deposition; shielding; transmission electron microscopy; Y<sub>2</sub>O<sub>3</sub>TiO<sub>2</sub>-SiO<sub>2</sub>-Si; amorphous higher dielectric constant film; amorphous higher k gate dielectric layer; anneal; combinatorial methodology; combinatorial pulsed laser deposition; composition parameter space; compositional spread libraries; gate stacks; gate-last process flow; high-resolution transmission electron microscopy; high-throughput screening; scanning X-ray microdiffractometry; temperature 500 C; Dielectric constant; Logic gates; Pulsed laser deposition; Silicon; <formula formulatype=$ $hbox{Y}_{2}hbox{O}_{3}$– $hbox{TiO}_{2}hbox{/}hbox{SiO}_{2}$ library films; Amorphous; combinatorial pulsed laser deposition (PLD); higher $kappa$ dielectrics;