DocumentCode :
1314277
Title :
A 60 GHz Sub-Harmonic Resistive FET Mixer Using 0.13 
CMOS Technology
Author :
Lin, Shih-Kai ; Kuo, Jing-Lin ; Wang, Huei
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Volume :
21
Issue :
10
fYear :
2011
Firstpage :
562
Lastpage :
564
Abstract :
A 56 to 66 GHz sub-harmonic resistive mixer using 0.13 μm CMOS technology is presented in this letter. This mixer exhibits a flat conversion loss of about -12 and -13 dB and good isolations between ports from 56 to 66 GHz for both down and up-conversion with a lowest LO power of 0 and -1 dBm. The 2LO-RF isolation is more than 27 dB even if IF input power exceeds 4 dBm, which results from the mechanism of connecting drain and body of the device. Besides, this mixer has a relatively high input P1dB and a 3 GHz IF bandwidth in each band defined in IEEE 802.15.3c standard.
Keywords :
CMOS integrated circuits; Zigbee; field effect MIMIC; field effect transistors; millimetre wave mixers; 2LO-RF isolation; CMOS technology; IEEE 802.15.3c standard; IF input power; frequency 66 GHz to 56 GHz; size 0.13 mum; subharmonic resistive FET mixer; CMOS integrated circuits; FETs; Frequency measurement; Gain; Mixers; Radio frequency; Transmission line measurements; CMOS mixers; resistive FET mixers; resonator; sub-harmonic mixers;
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2011.2165701
Filename :
6009209
Link To Document :
