• DocumentCode
    1314299
  • Title

    780 nm, low threshold current laser fabricated by two-step, solid-phase Zn diffusion

  • Author

    Shima, A. ; Kamizato, T. ; Takami, A. ; Karakida, S. ; Isshiki, K. ; Matsubara, H.

  • Author_Institution
    Mitsubishi Electr. Corp., Hyogo, Japan
  • Volume
    26
  • Issue
    13
  • fYear
    1990
  • fDate
    6/21/1990 12:00:00 AM
  • Firstpage
    915
  • Lastpage
    916
  • Abstract
    A Zn diffusion stripe laser is fabricated by the metalorganic chemical vapour deposition and the open-tube, two-step, solid-phase diffusion technique. The threshold current is 9.4 mA and the lasing wavelength is 780 nm at 20 degrees C. The laser operates in the fundamental transverse mode and the astigmatic distance is less than 1 mu m. The laser has operated for over 1000 h at 60 degrees C with a power of 3 mW.
  • Keywords
    III-V semiconductors; aluminium compounds; chemical vapour deposition; gallium arsenide; semiconductor doping; semiconductor junction lasers; zinc; 1 micron; 1000 h; 20 C; 3 mW; 60 C; 780 nm; 9.4 mA; AlGaAs:Zn laser diode; MOCVD; Zn diffusion stripe laser; astigmatic distance; fundamental transverse mode; lasing wavelength; low threshold current laser; metalorganic chemical vapour deposition; semiconductors; solid-phase diffusion technique; threshold current; two step diffusion technique;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900598
  • Filename
    82846