DocumentCode
1314299
Title
780 nm, low threshold current laser fabricated by two-step, solid-phase Zn diffusion
Author
Shima, A. ; Kamizato, T. ; Takami, A. ; Karakida, S. ; Isshiki, K. ; Matsubara, H.
Author_Institution
Mitsubishi Electr. Corp., Hyogo, Japan
Volume
26
Issue
13
fYear
1990
fDate
6/21/1990 12:00:00 AM
Firstpage
915
Lastpage
916
Abstract
A Zn diffusion stripe laser is fabricated by the metalorganic chemical vapour deposition and the open-tube, two-step, solid-phase diffusion technique. The threshold current is 9.4 mA and the lasing wavelength is 780 nm at 20 degrees C. The laser operates in the fundamental transverse mode and the astigmatic distance is less than 1 mu m. The laser has operated for over 1000 h at 60 degrees C with a power of 3 mW.
Keywords
III-V semiconductors; aluminium compounds; chemical vapour deposition; gallium arsenide; semiconductor doping; semiconductor junction lasers; zinc; 1 micron; 1000 h; 20 C; 3 mW; 60 C; 780 nm; 9.4 mA; AlGaAs:Zn laser diode; MOCVD; Zn diffusion stripe laser; astigmatic distance; fundamental transverse mode; lasing wavelength; low threshold current laser; metalorganic chemical vapour deposition; semiconductors; solid-phase diffusion technique; threshold current; two step diffusion technique;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19900598
Filename
82846
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