Title :
Fundamental limitation on large-signal modulation of semiconductor lasers and its implications for lightwave transmission
Author :
Agrawal, Govind P.
Author_Institution :
Inst. of Opt., Rochester Univ., NY, USA
fDate :
6/21/1990 12:00:00 AM
Abstract :
The performance of single-mode semiconductor lasers under large signal modulation is found to be limited by intraband gain saturation occurring when the on-state output power becomes comparable to the saturation level. The main effect of intraband gain saturation is to increase the fall time associated with the optical pulse. At high bit rates the pulse stretches over several neighbouring bits, thereby affecting the system performance. In the case of 1.55 mu m InGaAsP laser operating at bit rates approximately 10 Gbit/s intraband gain saturation limits the average power in the range approximately 10-20 mW for an acceptable system performance.
Keywords :
optical communication equipment; optical modulation; semiconductor junction lasers; 1.55 micron; 10 Gbit/s; 10 to 20 mW; InGaAsP laser; bit rates; fall time increase; fundamental limitation; high bit rates; implications for lightwave transmission; intraband gain saturation; large-signal modulation; on-state output power; pulse stretching; saturation level; single-mode semiconductor lasers; system performance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900599