Nonreciprocal Polarization Conversion in Asymmetric Magnetooptic Waveguide

Author

Amemiya, Tomohiro ; Abe, Kenji ; Tanemura, Takuo ; Mizumoto, Tetsuya ; Nakano, Yoshiaki

Author_Institution

Quantum Nanoelectron. Res. Center, Tokyo Inst. of Technol., Tokyo, Japan

Volume

46

Issue

11

fYear

2010

Firstpage

1662

Lastpage

1669

Abstract

A nonreciprocal polarization converter compatible with InP photonic integrated circuits is demonstrated. The device consists of an asymmetric InGaAsP waveguide combined with a ferrimagnetic Ce:YIG layer. It makes use of the direction dependence of the propagation of light in the waveguide. A trial device was made using orientation-dependent etching of InGaAsP and wafer-bonding of YIG to InGaAsP. It showed a nonreciprocal TE-TM conversion efficiency of 38% at 1.55 μm wavelength.

Keywords

III-V semiconductors; cerium; gallium arsenide; gallium compounds; indium compounds; integrated optics; light polarisation; light propagation; magneto-optical devices; magneto-optical effects; optical waveguides; wafer bonding; yttrium compounds; InGaAsP; InP; Y₃Fe₅O₁₂:Ce; asymmetric magnetooptic waveguide; ferrimagnetic layer; light propagation; nonreciprocal TE-TM conversion efficiency; nonreciprocal polarization conversion; orientation-dependent etching; photonic integrated circuits; wafer bonding; wavelength 1.55 mum; Backpropagation; Indium phosphide; Optical devices; Optical polarization; Optical waveguides; Substrates; Magnetooptic effect; photonic integrated circuits; polarization converter; waveguide optical isolator;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2010.2058093

Filename

5565359