DocumentCode :
1314423
Title :
33–43 GHz and 66–86 GHz VCO With High Output Power in an 80 GHz {\\rm f}_{\\rm T} SiGe HBT Technology
Author :
Liu, Gang ; Trasser, Andreas ; Schumacher, Hermann
Author_Institution :
Competence Center on Integrated Circuits in Commun., Ulm Univ., Ulm, Germany
Volume :
20
Issue :
10
fYear :
2010
Firstpage :
557
Lastpage :
559
Abstract :
This letter presents a signal generation circuit that combines a wide tuning range voltage controlled oscillator (VCO) and a frequency doubler. The VCO provides two differential outputs with different power levels. A push-push frequency doubler is designed and cascaded to the high power output of the VCO, while the low power output is reserved to drive a frequency divider in a PLL. The VCO can be tuned from 33 to 43 GHz, with around 0 dBm output power at the low power output. Simultaneously, signal generation from 66 to 86 GHz is achieved at the doubler output, with a maximum output power of -1.1 dBm at 74 GHz (-2.5 dBm at 81 GHz). The measured phase noise at the VCO output and the doubler output are -91 dBc/Hz and -83 dBc/Hz at 1 MHz offset (-112 dBc/Hz and -106 dBc/Hz at 10 MHz offset), respectively. The circuit is realized in a 0.8 SiGe heterojunction bipolar transistor process, with fT/fmax of 80/90 GHz. The VCO consumes 81 mA current while the doubler consumes an extra 17 mA from a 4 V supply. The circuit demonstrates the possibility of wide-band signal generation up to fmax with sufficient output power (e.g. to drive a mixer) in a conservatively scaled, low-cost process.
Keywords :
Ge-Si alloys; frequency dividers; frequency multipliers; heterojunction bipolar transistors; phase locked loops; signal generators; voltage-controlled oscillators; HBT technology; PLL; frequency 33 GHz to 43 GHz; frequency 66 GHz to 86 GHz; frequency divider; heterojunction bipolar transistor process; phase locked loops; push-push frequency doubler; signal generation circuit; wide tuning range voltage controlled oscillator; Frequency conversion; Heterojunction bipolar transistors; Phase noise; Power generation; Tuning; Voltage-controlled oscillators; Frequency multiplication; heterojunction bipolar transistors; signal generators; voltage controlled oscillators (VCOs);
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2010.2066262
Filename :
5565364
Link To Document :
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