Title :
MMIC-Based Components for MM-Wave Instrumentation
Author :
Vassilev, Vessen ; Wadefalk, N. ; Kozhuharov, R. ; Abbasi, M. ; Gunnarsson, S.E. ; Zirath, H. ; Pellikka, T. ; Emrich, A. ; Pantaleev, M. ; Kallfass, I. ; Leuther, A.
Author_Institution :
Microwave Electron. Lab., Chalmers Univ. of Technol., Göteborg, Sweden
Abstract :
In this letter, we present results of fully integrated 90-130 GHz receiver based on 100 nm mHEMT technology. The receiver contains a low noise amplifier (LNA), mixer and LO multiplier chain integrated into a single monolithic microwave integrated circuit (MMIC). The circuit is packaged into a waveguide block, characterized and compared to on-wafer measurements. Waveguide to microstrip transitions are used to interface the MMIC to the waveguide. A breakout LNA circuit is also packaged, and its performance is compared to the receiver. The LNA noise was characterized on a wafer and after packaging. The packaged module is measured at both room and cryogenic temperatures, NF of 3.7 dB is measured at 300 K and 0.9 dB at 20 K.
Keywords :
HEMT integrated circuits; MMIC; cryogenic electronics; field effect MIMIC; integrated circuit packaging; low noise amplifiers; millimetre wave amplifiers; millimetre wave receivers; LO multiplier chain; MM-wave instrumentation; MMIC-based components; breakout LNA circuit; cryogenic temperatures; frequency 90 GHz to 130 GHz; full integrated receiver; low noise amplifier; mHEMT technology; microstrip transitions; mixer; noise figure 0.9 dB; noise figure 3.7 dB; on-wafer measurements; single monolithic microwave integrated circuit; size 100 nm; temperature 20 K; temperature 293 K to 298 K; temperature 300 K; waveguide block; waveguide transitions; Gain; MMICs; Mixers; Noise; Noise measurement; Receivers; Temperature measurement; 118 GHz; Frequency multiplier; mHEMT; millimeter wave circuits; millimeter wave receivers; monolithic microwave integrated circuit (MMIC);
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2010.2065797