Title :
8 GHz full Nyquist HBT comparator
Author :
Selle, D. ; Carisetti, Dominique ; Ducourant, T. ; Bertsch, P.
Author_Institution :
Labs. d´Electron. Philips, Limeil-Brevannes, France
fDate :
6/21/1990 12:00:00 AM
Abstract :
A very high speed voltage comparator circuit implemented with self-aligned GaAlAs/GaAs heterojunction bipolar transistors (HBTs) has been demonstrated. The 2 mu m emitter width transistors have a current gain cut-off frequency of 30 GHz and a maximum oscillation frequency of 34.8 GHz. A full Nyquist test as been performed up to 8 GHz, the input sensitivity varying from 3 mV at 0.5 GHz to 30 mV at 8 GHz. The hysteresis measured under quasi-static conditions is as low as 0.5 mV.
Keywords :
III-V semiconductors; MMIC; aluminium compounds; bipolar integrated circuits; comparators (circuits); gallium arsenide; heterojunction bipolar transistors; integrated circuit technology; 2 micron; 34.8 to 0.5 GHz; GaAlAs-GaAs; Nyquist test; current gain cut-off frequency; full Nyquist HBT comparator; high speed voltage comparator circuit; hysteresis; input sensitivity; maximum oscillation frequency; self aligned HBT; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900601
