DocumentCode :
1314589
Title :
Charge Trapping and Detrapping Behavior of Fluorinated 
Gate Stacked nMOSFET
Author :
Chen, Yung-Yu ; Hsieh, Chih-Ren
Author_Institution :
Lunghwa Univ. of Sci. & Technol., Taoyuan, Taiwan
Volume :
31
Issue :
11
fYear :
2010
Firstpage :
1178
Lastpage :
1180
Abstract :
The charge trapping and detrapping characteristics of the fluorinated hafnium oxide/oxynitride (HfO2/SiON) gate stack are investigated. Although incorporation of fluorine in the bulk stack had been proven to eliminate both bulk and interface trap densities due to Hf-F and Si-F bond formation, respectively, the effective trapping barrier of the device with fluorine incorporation (1.29 eV) is deeper than without fluorine incorporation (1.13 eV), indicating that the detrapping ability of the fluorinated devices may limit future fluorine process applications.
Keywords :
MOSFET; fluorine; hafnium compounds; silicon compounds; HfO2-SiON; charge detrapping behavior; charge trapping behavior; fluorinated gate stacked nMOSFET; fluorine incorporation; fluorine process applications; hafnium oxide-oxynitride; interface trap densities; Charge carrier processes; Dielectrics; High K dielectric materials; Logic gates; MOSFET circuits; Passivation; Silicon; $hbox{HfO}_{2}$ ; Charge detrapping; fluorine;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2010.2064753
Filename :
5565386
Link To Document :
