Title :
Suppression of boron penetration by using inductive-coupling-nitrogen-plasma in stacked amorphous/polysilicon gate structure
Author :
Yang, Wen Luh ; Lin, Chiou-Jyi ; Chao, Tien Sheng ; Liu, Don-Gey ; Lei, Tan Fu
Author_Institution :
Graduate Inst., Feng Chia Univ., Taichung, Taiwan
fDate :
6/19/1997 12:00:00 AM
Abstract :
A method is introduced for suppressing the penetration of boron for BF2+-implanted pMOS devices with a stacked amorphous/poly-Si (SAP) gate structure. It is shown that after inductive-coupling-nitrogen-plasma (ICNP) treatment, boron diffusion through the thin gate oxide is largely suppressed. As shown from the charge-to-breakdown measurements, the ICNP process will improve the quality of pMOS devices, with Qbd three times higher than for the control samples
Keywords :
MIS devices; amorphous semiconductors; boron; diffusion; elemental semiconductors; ion implantation; silicon; BF2+-implantation; N2; Si:BF2; boron penetration; charge-to-breakdown; diffusion; inductive-coupling-nitrogen-plasma; pMOS device; stacked amorphous/polysilicon gate;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970706
