Title :
Broad spectral bandwidth semiconductor lasers
Author :
Krauss, T.F. ; Hondromitros, G. ; Vögele, B. ; De La Rue, R.M.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
fDate :
6/19/1997 12:00:00 AM
Abstract :
Wavelength-tuned semiconductor lasers have been realised in a GaAs/AlGaAs structure in which the active layer contains three different sizes of quantum well. Extended cavity operation with an external grating has enabled a useful tuning range of 88 nm (778-866 nm) to be demonstrated while the threshold current varied by no more than 20 mA about a nominal value of 100 mA across the tuning range. Alternatively, the wide spectral bandwidth of the structure could be used in very short-pulse mode-locked lasers
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser mode locking; laser tuning; quantum well lasers; 100 mA; 778 to 866 nm; GaAs-AlGaAs; GaAs/AlGaAs active layer; extended cavity; external grating; quantum well; semiconductor laser; short-pulse mode-locked laser; spectral bandwidth; threshold current; wavelength tuning range;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970777
