Title :
Gas-source molecular-beam epitaxy and optical characterisation of highly-reflective InGaAsP/InP multilayer Bragg mirrors for 1.3 μm vertical-cavity lasers
Author :
Salet, P. ; Pagnod-Rossiaux, Ph ; Gaborit, F. ; Plais, A. ; Jacquet, J.
Author_Institution :
Alcatel Alsthom Recherche, Marcoussis, France
fDate :
6/19/1997 12:00:00 AM
Abstract :
A highly reflective InGaAsP/InP Bragg mirror is reported for the first time at 1.3 μm. The control of both layer compositions and thicknesses over 2 in wafers in the gas-source molecular-beam epitaxy equipment has enabled the realisation of such a mirror. An absolute reflectivity of 99.6% using a VW technique was recorded on a Pt/Au metallised 40-period mirror
Keywords :
laser mirrors; 1.3 micron; InGaAsP-InP; InGaAsP/InP multilayer Bragg mirror; Pt/Au metallisation; VCSEL; VW technique; gas-source molecular-beam epitaxy; optical reflectivity; vertical-cavity laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970762
